論文発表

Ken Takeuchi, Tomoharu Tanaka, and Toru Tanzawa, “A Multipage Cell Architecture for High-Speed Programming Multilevel NAND Flash Memories,” IEEE J. of Solid-State Circuits, vol. 33, no. 8, pp. 1228-1238, August 1998.

Toru Tanzawa, Tomoharu Tanaka, Ken Takeuchi, Riichiro Shirota, Seeichi Aritome, Hiroshi Watanabe, Gertjan Hemink, Kazuhiro Shimizu, Shinji Sato, Yuji Takeuchi, and Kazunori Ohuchi, “A Compact On-Chip ECC for Low Cost Flash Memories,” IEEE J. of Solid-State Circuits, vol. 32, no. 5, pp. 662-669, May 1997.

Ken Takeuchi, Tomoharu Tanaka, and Hiroshi Nakamura, “A Double-Level-Vth Select Gate Array Architecture for Multilevel NAND Flash Memories,” IEEE J. of Solid-State Circuits, vol. 31, no. 4, pp. 602-609, April 1996.

Ken Takeuchi, Tomoharu Tanaka, and Hiroshi Nakamura, “A Double-Level-Vth Select Gate Array Architecture for Multilevel NAND Flash Memories,” IEICE Transactions on Electronics, vol. E79-C, no. 7, pp. 1013-1020, July 1996.

Toshiharu Saiki, Ken Takeuchi, Kazuhiro Ema, Makoto Kuwata-Gonokami, K. Ohkawa, and T. Mitsuyu, “Free induction decay and quantum beat of excitons in ZnSe,” Journal of Crystal Growth, vol. 138, pp.805-808, April 1994.

Toshiharu Saiki, Ken Takeuchi, Makoto Kuwata-Gonokami, T. Mitsuyu and K. Ohkawa, “Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy,” Journal of Crystal Growth, vol. 117, pp. 802-805, February 1992.

Toshiharu Saiki, Ken Takeuchi, Makoto Kuwata-Gonokami, T. Mitsuyu and K. Ohkawa, “Giant nonlinearity phase shift at exciton resonance in ZnSe,” Applied Physics Letter, vol. 60, no. 2, pp. 192-194, February 1992.