論文発表

Ken Takeuchi and Tomoharu Tanaka, “A Dual Page Programming Scheme for High-Speed Multi-Gb-Scale NAND Flash Memories,” IEEE J. of Solid-State Circuits, vol. 36, no. 5, pp. 744-751, May 2001.

Ken Takeuchi, Shinji Satoh, Ken-ichi Imamiya, and Koji Sakui, “A Source-line Programming Scheme for Low Voltage Operation NAND Flash Memories,” IEEE J. of Solid-State Circuits, vol. 35, no. 5, pp. 672-681 May 2000.

Kenichi Imamiya, Yoshihisa Sugiura, Hiroshi Nakamura, Toshihiko Himeno, Ken Takeuchi, Tamio Ikehashi, Kazushige Kanda, Koji Hosono, Riichiro Shirota, Seiichi Aritome, Kazuhiro Shimizu, Kazuo Hatakeyama, and Koji Sakui, “A 130-mm2, 256-Mbit NAND Flash with Shallow Trench Isolation Technology,” IEEE J. of Solid-State Circuits, vol. 34, no. 11, pp. 1536-1542, November 1999.

Ken Takeuchi, Shinji Satoh, Tomoharu Tanaka, Ken-ichi Imamiya, and Koji Sakui, “A Negative Vth Cell Architecture for Highly Scalable, Excellently Noise-Immune, and Highly Reliable NAND Flash Memories,” IEEE J. of Solid-State Circuits, vol. 34, no. 5, pp. 675-684, June 1999.

Ken Takeuchi, Tomoharu Tanaka, and Toru Tanzawa, “A Multipage Cell Architecture for High-Speed Programming Multilevel NAND Flash Memories,” IEEE J. of Solid-State Circuits, vol. 33, no. 8, pp. 1228-1238, August 1998.

Toru Tanzawa, Tomoharu Tanaka, Ken Takeuchi, Riichiro Shirota, Seeichi Aritome, Hiroshi Watanabe, Gertjan Hemink, Kazuhiro Shimizu, Shinji Sato, Yuji Takeuchi, and Kazunori Ohuchi, “A Compact On-Chip ECC for Low Cost Flash Memories,” IEEE J. of Solid-State Circuits, vol. 32, no. 5, pp. 662-669, May 1997.

Ken Takeuchi, Tomoharu Tanaka, and Hiroshi Nakamura, “A Double-Level-Vth Select Gate Array Architecture for Multilevel NAND Flash Memories,” IEEE J. of Solid-State Circuits, vol. 31, no. 4, pp. 602-609, April 1996.

Ken Takeuchi, Tomoharu Tanaka, and Hiroshi Nakamura, “A Double-Level-Vth Select Gate Array Architecture for Multilevel NAND Flash Memories,” IEICE Transactions on Electronics, vol. E79-C, no. 7, pp. 1013-1020, July 1996.

Toshiharu Saiki, Ken Takeuchi, Kazuhiro Ema, Makoto Kuwata-Gonokami, K. Ohkawa, and T. Mitsuyu, “Free induction decay and quantum beat of excitons in ZnSe,” Journal of Crystal Growth, vol. 138, pp.805-808, April 1994.

Toshiharu Saiki, Ken Takeuchi, Makoto Kuwata-Gonokami, T. Mitsuyu and K. Ohkawa, “Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy,” Journal of Crystal Growth, vol. 117, pp. 802-805, February 1992.

Toshiharu Saiki, Ken Takeuchi, Makoto Kuwata-Gonokami, T. Mitsuyu and K. Ohkawa, “Giant nonlinearity phase shift at exciton resonance in ZnSe,” Applied Physics Letter, vol. 60, no. 2, pp. 192-194, February 1992.