論文発表

国際学会
  • Ken Takeuchi, “Can memory provide performance breakthrough for traditional architectures?”, IEEE International Solid-State Circuits Conference (ISSCC) Panel What Technologies Will Shape the Future of Computing?, February 19, 2021. 【招待講演】

  • Chihiro Matsui and Ken Takeuchi, “SLC Flash & ReRAM Heterogeneous Memory System with Multi-Tier 5G Network & Device Co-Design for Smart Manufacturing”, International Conference on Solid State Devices and Materials (SSDM), September 30, 2020.

  • Ken Takeuchi, “Heterogeneously Integrated Adaptive Storage System for 5G Network”, International Conference on Solid State Devices and Materials (SSDM) Short Course, September 27, 2020.【招待講演】

  • Chihiro Matsui, Shun Suzuki and Ken Takeuchi, “Spatial Color-Perceived Data Control of NAND Flash for Image Detection,” IEEE Silicon Nanoelectronics Workshop (SNW), June 13-14, 2020.

  • Shun Suzuki, Hiroki Aihara, Keita Mizushina, Shin Yamaguchi and Ken Takeuchi, “Approximate 3D-TLC NAND Flash Write with Initial Error Injection for Application-level Reliability Improvement of Machine Learning-based Computing,” IEEE Silicon Nanoelectronics Workshop (SNW), June 13-14, 2020.

  • Keita Mizushina, Shun Suzuki, Hiroki Aihara and Ken Takeuchi, “3840x Reliability Enhanced Robust NAND flash Optimized to Store Weight Data for Object Detection and Semantic Segmentation of Self-driving Car at High Temperature,” IEEE Silicon Nanoelectronics Workshop (SNW), June 13-14, 2020.

  • Hiroki Aihara, Kyosuke Maeda, Shun Suzuki and Ken Takeuchi, “Extremely Biased Error Correction Method to Reduce Read Disturb Errors of 3D-TLC NAND Flash Memories by 60%,” IEEE International Memory Workshop Poster, May 18, 2020.

  • Yusaku Hine, Reika Kinoshita, Yoshiki Kakuta and Ken Takeuchi, “Data Allocation Algorithm based on Write and Read Frequency for Double Asymmetric-latency SCM SSD,” IEEE International Memory Workshop Poster, May 20, 2020.

  • Masaki Abe, Chihiro Matsui, Keita Mizushina, Shun Suzuki and Ken Takeuchi, “Computational Approximate Storage with Neural Network-based Error Patrol of 3D-TLC NAND Flash Memory for Machine Learning Applications,” IEEE International Memory Workshop Poster, May 20, 2020.

  • Chihiro Matsui and Ken Takeuchi, “ReRAM Cell Reliability Variation Tolerated High-Speed Approximate Storage for Machine Learning,” IEEE Symp. on Low-Power and High-Speed Chips and Systems (Cool Chips 23) Poster, April 15, 2020.

  • Yoshiki Kakuta, Reika Kinoshita, Hiroshi Kinoshita, Chihiro Matsui and Ken Takeuchi, “Real-time Error Monitoring System Considering Endurance and Data-retention Characteristics of TaOX-based ReRAM Storage with Workloads at Data Centers,” IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT), August 13, 2020.

  • Tsubasa Yonai, Hiroshi Kinoshita, Ryutaro Yasuhara and Ken Takeuchi, “98% Endurance Error Reduction by Hard_Verify for 40nm TaOX-based ReRAM,” IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), August 11, 2020.

  • Reika Kinoshita, Atsuya Suzuki, Shouhei Fukuyama, Chihiro Matsui and and Ken Takeuchi, “Workload-aware Data-eviction Self-adjusting System of Multi-SCM Storage to Resolve Trade-off between SCM Data-retention Error and Storage System Performance,” 25th Asia and South Pacific Design Automation Conference (ASP-DAC 2020), pp. 319-324, January 2020.

  • Shun Suzuki, Kyoji Mizoguchi, Hikaru Watanabe, Toshiki Nakamura, Yoshiaki Deguchi, Keita Mizushina and Ken Takeuchi, “Privacy-Aware Data-Lifetime Control NAND Flash System for Right to be Forgotten with In-3D Vertical Cell Processing,” IEEE Asian Solid-State Circuits Conference (A-SSCC), November 6, 2019.

  • Koki Kamimura, Susumu Nohmi, Kenta Suzuki and Ken Takeuchi, “Parallel Product-Sum Operation Neuromorphic Systems with 4-bit Ferroelectric FET Synapses,” IEEE European Solid-State Device Research Conference (ESSDERC), pp. 178-181, September 2019.

  • Hiroshi Kinoshita, Shouhei Fukuyama, Tsubasa Yonai, Ryutaro Yasuhara and Ken Takeuchi, “85% Endurance Error Reduction by Changing Reset Voltage in 40nm TaOX-based ReRAM,” International Conference on Solid State Devices and Materials (SSDM), September, 2019.

  • Reika Kinoshita, Chihiro Matsui and Ken Takeuchi, “Maximizing Performance/cost of SSD Composed of Memory-type and Storage-type SCMs,” Flash Memory Summit, August, 2019.

  • Chihiro Matsui and Ken Takeuchi, “TaOx-based ReRAM for Variability-Aware Approximate Computing,” Flash Memory Summit, August, 2019.

  • Ken Takeuchi, “Non-volatile Memory Storage for Machine Learning,” IEEE SSCS VLSIedu, June 13, 2019.

  • Masaki Abe, Toshiki Nakamura and Ken Takeuchi, “Pre-shipment Data-retention/Read-disturb Lifetime Prediction & Aftermarket Cell Error Detection & Correction by Neural Network for 3D-TLC NAND Flash Memory,” IEEE Symp. on VLSI Technology, pp. 216-217, June 13, 2019.

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