論文発表

Takashi Inose, Tomoko Ogura Iwasaki, Sheyang Ning, Darlene Viviani, Monte Manning, X. M. Henry Huang, Thomas Rueckes and Ken Takeuchi, “Reliability Study of Carbon Nanotube Memory after Various Cycling Conditions,” Silicon Nanoelectronics Workshop (SNW) Poster, pp. P1-17, June 12-13, 2016.

Atsuro Kobayashi, Tsukasa Tokutomi and Ken Takeuchi, “Versatile TLC NAND Flash Memory Control to Reduce Read Disturb Errors by 85% and Extend Read Cycles by 6.7-times of Read-Hot and Cold Data for Cloud Data Centers,” IEEE Symp. on VLSI Technology, pp. 126-127, June 16, 2016.

Yusuke Yamaga, Chihiro Matsui, Shogo Hachiya and Ken Takeuchi, “Application Optimized Adaptive ECC with Advanced LDPCs to Resolve Trade-off among Reliability, Performance, and Cost of Solid-State Drives,” IEEE International Memory Workshop, pp.129-132, May 17, 2016.

Tsukasa Tokutomi and Ken Takeuchi, “17x Reliability Enhanced LDPC Code with Burst-Error Masking and High-Precision LLR for Highly Reliable Solid-State-Drives with TLC NAND Flash Memory,” IEEE International Memory Workshop, pp. 133-136, May 17, 2016.

Hiroki Yamazawa, Kazuki Maeda, Tomoko Ogura Iwasaki and Ken Takeuchi, “Privacy-Protection SSD with Precision ECC and Crush Techniques for 15.5× Improved Data-Lifetime Control,” IEEE International Memory Workshop, pp. 137-140, May 17, 2016.

Yusuke Sugiyama, Tomoaki Yamada, Chihiro Matsui, Takahiro Onagi and Ken Takeuchi, “Application Dependency of 3-D Integrated Hybrid Solid-State Drive System with Through-Silicon Via Technology,” International Conference on Electronic Packageing (ICEP), pp. 79-82, April 21, 2016.

Tomonori Takahashi, Senju Yamazaki and Ken Takeuchi, “Data-Retention Time Prediction of Long-term Archive SSD with Flexible-nLC NAND Flash,” IEEE International Reliability Physics Symposium (IRPS), pp.6C-5-1-6C-5-6, April 2016.

Yoshiaki Deguchi, Tsukasa Tokutomi and Ken Takeuchi, “System-Level Error Correction by Read-Disturb Error Model of 1Xnm TLC NAND Flash Memory for Read-Intensive Enterprise Solid-State Drives (SSDs),” IEEE International Reliability Physics Symposium (IRPS) Poster, pp.MY-6-1-MY-6-4, April 2016.

Yoshio Nakamura, Tomoko Iwasaki and Ken Takeuchi, “Machine Learning-Based Proactive Data Retention Error Screening in 1Xnm TLC NAND Flash,” IEEE International Reliability Physics Symposium (IRPS) Poster, pp.PR-3-1-PR-3-4, April 2016.

Atsuro Kobayashi, Tsukasa Tokutomi and Ken Takeuchi, “Highly Reliable Techniques for TLC NAND Flash Memory,” 7th Non-Volatile Memories Workshop 2016 (NVMW), March 2016.

Ken Takeuchi, “Dependable Non-volatile Memory System,” IEEE Asian Solid-State Circuits Conference (A-SSCC) Tutorial, November 2015.【招待講演】

Tomoya Ishii, Shogo Hachiya, Sheyang Ning, Masahiro Tanaka and Ken Takeuchi, “0.6V Operation, 26% Smaller Voltage Ripple, 9% Energy Efficient Boost Converter with Adaptively Optimized Comparator Bias-Current for ReRAM Program in Low Power IoT Embedded Applications,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp.1200-1201, November 2015.

Sheyang Ning, Tomoko Ogura Iwasaki, Eisuke Yanagizawa, Shogo Hachiya, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi, “Investigation of Carbon Nanotube Memory Cell Array Program Characteristics,” International Conference on Solid State Devices and Materials (SSDM), pp.1198-1199, September 2015.

Masahiro Tanaka, Shogo Hachiya, Tomoya Ishii, Sheyang Ning and Ken Takeuchi, “A 1.0 V Operation, 65% Faster Set/Reset Voltage (3V) Generator for 3D-integrated ReRAM and NAND flash Hybrid Solid-State Drive,” International Conference on Solid State Devices and Materials (SSDM), pp.1200-1201, September 2015.

Ken Takeuchi, “Future prospects of data storage technologies: NAND flash memory and storage class memory hybrid system,” International Conference on Solid State Devices and Materials (SSDM), pp. 1186-1187, September 2015. 【招待講演】

Ken Takeuchi, “ReRAM for Storage Class Memory Application from Memory Architecture Perspective,” 5th International Workshop on Resistive Memories, September 2015. 【招待講演】

Shogo Hachiya, Takahiro Onagi, Sheyang Ning and Ken Takeuchi “Comprehensive Comparison of 3D-TSV Integrated Solid-State Drives (SSDs) with Storage Class Memory and NAND Flash Memory,” pp. TS6.2.1-TS6.2.5, IEEE International Conference on 3D System Integration (3D IC), September 2015.

Atsuro Kobayashi, Tsukasa Tokutomi, Masafumi Doi, Shogo Hachiya, Shuhei Tanakamaru and Ken Takeuchi, “High Reliable SSDs for Enterprise Storage with Dynamic VTH Optimization and Auto Data Recovery,” Flash Memory Summit, August 2015.

Chao Sun, Asuka Arakawa, Ayumi Soga, Chihiro Matsui and Ken Takeuchi, “Middleware and Flash Translation Layer Co-Design for the Performance Boost of Solid-State Drives,” Flash Memory Summit, August 2015.

Hirofumi Takishita, Sheyang Ning and Ken Takeuchi, “Trade-off of Performance, Reliability and Cost of SCM/NAND Flash Hybrid SSD,” Silicon Nanoelectronics Workshop (SNW), pp. 92-93, June 2015.