IEEE International Symposium on VLSI Technology, Systems and Applicationsで論文を発表します（8/11, 2020）

Tsubasa Yonai, Hiroshi Kinoshita, Ryutaro Yasuhara and Ken Takeuchi, “98% Endurance Error Reduction by Hard_Verify for 40nm TaOX-based ReRAM,” IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), August 11, 2020.