International Conference on Solid State Devices and Materials (SSDM)で８件の論文を発表（9/15-18, 2025）

Ken Takeuchi, “Memory-Centric Computing Circuits for AI Applications,” International Conference on Solid State Devices and Materials (SSDM) Short Course, September 15, 2025. 【招待講演】

Yusuke Izume, Yusuke Hirata, Naoko Misawa, Masahiro Morimoto, Takeshi Ohara, Chihiro Matsui, Ken Takeuchi, “Column-wise Weight Value Inversion (Colwin) of ReRAM CiM to Reduce MAC Error during Data-retention,” International Conference on Solid State Devices and Materials (SSDM), September 16, 2025, pp. 103-104.

Yushi Abarra, Naoko Misawa, Chihiro Matsui, Ken Takeuchi, “Fine-Grained Extraction Method of Discrete Shift and Spike RTN in 40nm TaOX-based Analog ReRAM for CiM Applications,” International Conference on Solid State Devices and Materials (SSDM), September 16, 2025, pp. 105-106.

Yusuke Hirata, Koki Shibata, Naoko Misawa, Takashi Ota, Yuki Yoshinaga, Chihiro Matsui, Ken Takeuchi, “Accurate Si3N4 Wet Etching Rate Prediction with Small Training Data by Gaussian Process Regression,” International Conference on Solid State Devices and Materials (SSDM), September 17, 2025, pp. 39-40.

Daqi Lin, Tao Wang, Ruhui Liu, Naoko Misawa, Chihiro Matsui, Ken Takeuchi, “Truncated Carry Approximate Adder and Explicit Bit Pruning for SRAM-based Digital Computation-in-Memory,” International Conference on Solid State Devices and Materials (SSDM), September 17, 2025, pp. 277-278

Ruhui Liu, Yufan Zhang, Naoko Misawa, Chihiro Matsui, Ken Takeuchi, “Hybrid-Domain SRAM Computation-in-Memory Architecture for Mixed-Precision FP/INT Operations,” International Conference on Solid State Devices and Materials (SSDM), September 17, 2025, pp. 275-276.

Shota Suzuki, Naoko Misawa, Chihiro Matsui, Ken Takeuchi, “Hybrid SLC/MLC ReRAM for Quantized KV Cache in Transformer-based LLM,” International Conference on Solid State Devices and Materials (SSDM) Poster Late News, September 17, 2025, pp. 755-756.

Naoko Misawa, Ruiqi Zhang, Tao Wang, Chihiro Matsui, Ken Takeuchi, “Tiny & Error-robust Edge ViT CiM with 1/10 Training Parameters by Iteratively Error Injected LoRA (Ei-LoRA),” International Conference on Solid State Devices and Materials (SSDM), September 18, 2025, pp. 451-452.