Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Shinji Miyano and Ken Takeuchi, “70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection,” IEEE Symp. on VLSI Circuits, pp.41-42, June 2010.

Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD,” IEEE International Memory Workshop, pp.42-45, May 2010.

Shuhei Tanakamaru, Atsushi Esumi, Mitsuyoshi Ito, Kai Li and Ken Takeuchi, “Post-manufacturing, 17-times Acceptable Raw Bit Error Rate Enhancement, Dynamic Codeword Transition ECC Scheme for Highly Reliable Solid-State Drives, SSDs,” IEEE International Memory Workshop, pp88-91, May 2010.

Ken Takeuchi, “Low Power 3D-integrated Solid-State Drive (SSD) with Adaptive Voltage Generator,” IEEE International Memory Workshop, pp.13-16, May 2010.【招待講演】

Kosuke Miyaji and Ken Takeuchi, “Advanced NAND Flash Memory Devices and Solid-State Drives,” Materials Research Society (MRS) Spring Meeting, Tutorial Session G, April 2010. 【招待講演】

Ken Takeuchi, “Ferroelectric-gate FET for Flash Memory & SRAM application,” ITRS Emerging Research Devices and Emerging Research Materials Meeting, Memory Workshop, April 2010.【招待講演

Kosuke Miyaji, Teruyoshi Hatanaka, Shuhei Tanakamaru, Ryoji Yajima, Shinji Noda, Mitsue Takahashi and Shigeki Sakai and Ken Takeuchi, “A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC,” Materials Research Society (MRS) Spring Meeting, April 2010. 【招待講演】

Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin,” IEEE International Electron Devices Meeting (IEDM), pp. 11.7.1-11.7.4, December 2009.

Mitsue Takahashi, Shouyu Wang, Ken Takeuchi and Shigeki Sakai, “Fe-NAND Flash-memory Application of Ferroelectric Gate FETs”, F10-6, MRS (Materials Research Society) Fall Meeting, December 2009.

Shinji Noda, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A 1.2V Operation 2.43 Times Higher Power Efficiency Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories,” pp.162-163, International Conference on Solid State Devices and Materials (SSDM), October 2009.

Ryoji Yajima, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A Negative Word-line Voltage Step-Down Erase Pulse Scheme with ΔVTH=1/6 ΔVERASE for Enterprise SSD Application Ferroelectric (Fe)-NAND Flash Memories,” pp.1196-1197, International Conference on Solid State Devices and Materials (SSDM), October 2009.

Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi, “Effect of Resistance of TSV’s on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories,” IEEE International Conference on 3D System Integration (3D IC), September 2009.

Ken Takeuchi, “Solid State Drive (SSD) and Memory Subsystem Innovation,” CMOS Emerging Technologies, September 2009.【招待講演】

Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A Zero VTH Memory Cell Ferroelectric-NAND Flash Memory with 32% Read Disturb, 24% Program Disturb, 10% Data Retention Improvement for Enterprise SSD,” IEEE European Solid-State Device Research Conference (ESSDERC), pp.225-228, September 2009.

Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi, “Inductor Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories,” IEEE International Symposium on Low Power Electronics and Design (ISLPED), pp.87-91, August 2009.

Teruyoshi Hatanaka, Ryoji Yajima, Takeshi Horiuchi, Shouyu Wang, Xizhen Zhang, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD),” IEEE Symp. on VLSI Circuits, pp.78-79, June 2009.

Shuhei Tanakamaru and Ken Takeuchi, “A 60pJ, 3-Clock Rising Time, VTH Loss Compensated Word-line Booster Circuit for 0.5V Power Supply Embedded/Discrete DRAMs”, IEEE International Memory Workshop, pp.1-2, May 2009.

Ken Takeuchi, “3D LSI Design for MEMS Application,” Japan-Taiwan CMOS MEMS Workshop, pp.113-131, March 2009.【招待講演】

Ken Takeuchi, “Memory System Innovation with SSD and Emerging Memories,” IEEE International Solid-State Circuits Conference (ISSCC), Memory Forum F-1, February 2009. 【招待講演】

Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi, “A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD,” IEEE International Solid-State Circuits Conference (ISSCC), pp. 238-239, February 2009.