Chihiro Matsui and Ken Takeuchi, “Workload-based Dynamic SCM Capacity Management of SCM/NAND Flash Hybrid Storage,” IEEE Symp. on Low-Power and High-Speed Chips and Systems (Cool Chips 22) Poster, April, 2019.
Kyoji Mizoguchi, Kyosuke Maeda and Ken Takeuchi, “Automatic Data Repair Overwrite Pulse for 3D-TLC NAND Flash Memories with 38x Data-retention Lifetime Extension,” IEEE International Reliability Physics Symposium (IRPS) Poster, April 2019.
Shouhei Fukuyama, Atsuna Hayakawa, Ryutaro Yasuhara, Shinpei Matsuda and and Ken Takeuchi, “Comprehensive Analysis of Data-retention and Endurance Trade-off of 40nm TaOX-based ReRAM,” IEEE International Reliability Physics Symposium (IRPS), April 2019.
Chihiro Matsui and Ken Takeuchi, “Design of Heterogeneously-integrated Memory System with Storage Class Memories and NAND Flash Memories,” 24th Asia and South Pacific Design Automation Conference (ASP-DAC 2019) University LSI Design Contest, January 2019.
Ken Takeuchi, “Non-volatile Memory Technologies for Deep Learning Applications,” IEEE Asian Solid-State Circuits Conference (A-SSCC) Panel The Circuits and Systems for Mobile AI, November 6, 2018. 【招待講演】
Kota Tsurumi, Kenta Suzuki and Ken Takeuchi, “A 6.8TOPS/W Energy Efficiency, 1.5μW Power Consumption, Pulse Width Modulation Neuromorphic Circuits for Near-Data Computing with SSD,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp.129-132, November 7, 2018.
Atsuya Suzuki, Chihiro Matsui and Ken Takeuchi, “Periodic Data Eviction Algorithm of SCM/NAND Flash Hybrid SSD with SCM Retention Time Constraint Capabilities at Extremely High Temperature,” IEEE Non-Volatile Memory Technology Symposium (NVMTS) Poster, October 2018.
Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara and Ken Takeuchi, “Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify,” IEEE Non-Volatile Memory Technology Symposium (NVMTS) Poster, October 2018
Reika Kinoshita, Chihiro Matsui, Shinpei Matsuda, Yutaka Adachi and Ken Takeuchi, “Maximizing Peformance/cost Figure of Merit of Storage-type SCM based SSD by Adding Small Capacity of Memory-type SCM,” IEEE Non-Volatile Memory Technology Symposium (NVMTS) Poster, October 2018.
Ken Takeuchi, “Approximate Non-volatile Memories,” 8th International Workshop on Resistive Memories, October 4, 2018.【招待講演】
Shun Suzuki, Yoshiaki Deguchi, Toshiki Nakamura and Ken Takeuchi, “Endurance-based Dynamic VTH Distribution Shaping of 3D-TLC NAND Flash Memories to Suppress Both Lateral Charge Migration and Vertical Charge De-trap and Increase Data-retention Time by 2.7x,” IEEE European Solid-State Device Research Conference (ESSDERC), pp.150-153, September 2018.
Kazuki Maeda, Shinpei Matsuda, Ryutaro Yasuhara and Ken Takeuchi, “Observation and analysis of bit-by-bit cell current variation during data-retention of TaOx-based ReRAM,” IEEE European Solid-State Device Research Conference (ESSDERC), pp.46-49, September 2018.
Yusuke Sugiyama, Chihiro Matsui and Ken Takeuchi, “75% Performance Boost of RAID-5 Storage with SSDs by Garbage Collection Overhead Reduction for 3D NAND Flash Memory,” Silicon Nanoelectronics Workshop (SNW) Poster, June 17-18, 2018.
Yoshiaki Deguchi and Ken Takeuchi, “280x Data-retention Lifetime and 11x Write/Erase Endurance Enhancement of TLC NAND Flash Memories storing Deep Neural Network Weight Data by Data Compression,” Silicon Nanoelectronics Workshop (SNW), June 17-18, 2018.
Yusuke Yamaga, Yoshiaki Deguchi, Shouhei Fukuyama and Ken Takeuchi, “5x Reliability Enhanced 40nm TaOx Approximate-ReRAM with Domain-Specific Computing for Real-time Image Recognition of IoT Edge Devices,” IEEE Symp. on VLSI Technology, pp. 109-110, June 20, 2018.
Yoshiaki Deguchi, Kazuki Maeda, Shun Suzuki, Toshiki Nakamura and Ken Takeuchi, “Error-Reduction Controller Techniques of TaOx-based ReRAM for Deep Neural Networks to Extend Data-Retention Lifetime by Over 1700x,” IEEE International Memory Workshop, pp. 1-4, May 2018.
Yoshiaki Deguchi and Ken Takeuchi, “3D-NAND Flash Solid-State Drive (SSD) for Deep Neural Network Weight Storage of IoT Edge Devices with 700x Data-retention Lifetime Extention,” IEEE International Memory Workshop, pp. 1-4, May 2018.
Atsuna Hayakawa, Toshiki Nakamura, Yoshiaki Deguchi, Kazuki Maeda and Ken Takeuchi, “Data-aware Partial ECC with Data Modulation of ReRAM with Non-volatile In-memory Computing for Image Recognition with Deep Neural Network,” IEEE International Symposium on Circuits and Systems (ISCAS) Poster, pp. 1-5, May 2018.
Mamoru Fukuchi, Yukiya Sakaki, Chihiro Matsui and Ken Takeuchi, “20% System-performance Gain of 3D Charge-trap TLC NAND Flash over 2D Floating-gate MLC NAND Flash for SCM/NAND Flash Hybrid SSD,” IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1-5, May 2018.
Keita Mizushina, Toshiki Nakamura, Yoshiaki Deguchi and Ken Takeuchi, “Layer-by-layer Adaptively Optimized ECC of NAND flash-based SSD Storing Convolutional Neural Network Weight for Scene Recognition,” IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1-4, May 2018.
