Kousuke Miyaji, Daisuke Kobayashi, Shinji Miyano and Ken Takeuchiand, “Analysis on Static Noise Margin Improvement in 40nm 6T-SRAM with Post-Process Local Electron Injected Asymmetric Pass Gate Transistor,” IEEE International Reliability Physics Symposium (IRPS), 3B.6.1-3B.6.5, April 2013.

Shuhei Tanakamaru, Masafumi Doi and Ken Takeuchi, “Error-Prediction Analyses in 1X, 2X and 3Xnm NAND Flash Memories for System-Level Reliability Improvement of Solid-State Drives (SSDs),” IEEE International Reliability Physics Symposium (IRPS), 3B.3.1-3B.3.6, April 2013.

Ken Takeuchi, “Solid-State Drives (SSDs) with Flash Memories and Storage Class Memories,” IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT) and IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), April 2013.【招待講演】

Teruyoshi Hatanaka, Koh Johguchi and Ken Takeuchi, “Investigation of Program-Voltage Generator Integration for ReRAM and NAND Flash Memory Hybrid Three-Dimensional Solid-State Drive,” International Conference on Electronics Packaging, pp. 473-477, April 2013.

Shuhei Tanakamaru, Masafumi Doi and Ken Takeuchi, “Unified Solid-State Storage Architecture with NAND Flash Memory and ReRAM that Tolerates 32X Higher BER for Big-Data Applications,” IEEE International Solid-State Circuits Conference (ISSCC), pp.226-227, February 2013.

Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi, “Over 10-times High-speed, Energy Efficient 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSD by Intelligent Data Fragmentation Suppression,” 18th Asia and South Pacific Design Automation Conference (ASP-DAC 2013) University LSI Design Contest, January 2013.

Shuhei Tanakamaru, Yuki Yanagihara and Ken Takeuchi, “Highly Reliable Solid-State Drives (SSDs) with Error-Prediction LDPC (EP-LDPC) Architecture and Error-Recovery Scheme,” 18th Asia and South Pacific Design Automation Conference (ASP-DAC 2013) University LSI Design Contest, January 2013.

Ken Takeuchi, “Highly Reliable Signal Processing Technologies for Dependable Solid-State Drives (SSDs),” The 18th IEEE Pacific Rim International Symposium on Dependable Computing (PRDC), pp. 21, November 2012.【招待講演】

Koh Johguchi, Kazuaki Yoshioka and Ken Takeuchi, “High Density NAND Phase Change Memory with Block-Erase Architecture and Investigations for Write and Disturb Requirements,” Phase Change Oriented Science (PCOS), pp. 36, November 2012.

Ken Takeuchi, “Hybrid Memory Architecture of PCM and NAND flash memories for Enterprise Storage ,” Phase Change Oriented Science (PCOS), pp. 21, November 2012.【招待講演】

Ken Takeuchi, “Signal Processing and Data Management Technologies for NAND&ReRAM Hybrid SSD ,” New Non-Volatile Memory Workshop 2012, pp. A2-1 – A2-37 November 2012.【招待講演】

Ken Takeuchi, “Variability and Failure Recovery of SRAM and Flash Memory,” IEEE/ACM Workshop on Variability Modeling and Characterization (VMC), November 2012.【招待講演】

Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi, “An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 313-316, November 2012.

Teruyoshi Hatanaka and Ken Takeuchi, “VSET/RESET and VPGM Generator without Boosting Dead Time for 3D-ReRAM and NAND flash Hybrid Solid-State Drives,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 309-312, November 2012.

Chao Sun, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi, “x8 High Write-Throughput, 84% Write-Energy Saving, x6.5 Extended Lifetime Hybrid ReRAM/MLC NAND SSD with Cold Data Eviction Algorithm,” IEEE Non-Volatile Memory Technology Symposium (NVMTS), pp. 87-88, October 2012.

Ken Takeuchi, “Sophisticated Error Correction and Data Management Technologies for Storage Class Memory & NAND Flash Memory Hybrid Solid-State Drives (SSD),” IEEE Non-Volatile Memory Technology Symposium (NVMTS), pp. 49-50, October 2012.【招待講演】

Tomoko Ogura Iwasaki, Sheyang Ning and Ken Takeuchi, “Bipolar Read in ReRAM for 3x Write Speed and 5x Faster Read with Disturb Immunity,” International Conference on Solid State Devices and Materials (SSDM), pp. 642-643, September 2012.

Ken Takeuchi, “Application Perspectives for Storage Class Memory,” ITRS ERD (Emerging Research Device) Workshop on Emerging Architectures for Storage Class Memory, July 2012.【招待講演】

Ken Takeuchi, “System Solution for sub-10nm Flash Memories,” IEEE Symp. on VLSI Circuits, Joint Rump Session: Scaling Challenges Beyond 1x nm DRAM and NAND Flash, June 2012.【招待講演】

Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun and Ken Takeuchi, “x11 Performance Increase, x6.9 Endurance Enhancement, 93% Energy Reduction of 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSDs by Data Fragmentation Suppression,” IEEE Symp. on VLSI Circuits, pp.134-135, June 2012.