Ken Takeuchi, “Application Perspectives for Storage Class Memory,” ITRS ERD (Emerging Research Device) Workshop on Emerging Architectures for Storage Class Memory, July 2012.【招待講演】

Ken Takeuchi, “System Solution for sub-10nm Flash Memories,” IEEE Symp. on VLSI Circuits, Joint Rump Session: Scaling Challenges Beyond 1x nm DRAM and NAND Flash, June 2012.【招待講演】

Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun and Ken Takeuchi, “x11 Performance Increase, x6.9 Endurance Enhancement, 93% Energy Reduction of 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSDs by Data Fragmentation Suppression,” IEEE Symp. on VLSI Circuits, pp.134-135, June 2012.

Kazuaki Yoshioka, Koh Johguchi and Ken Takeuchi, “High Density NAND Phase Change Memory with Block-Erase Architecture to Compromise Write and Disturb Requirements,” IEEE International Memory Workshop, May 2012.

Kazuhide Higuchi, Tomoko Ogura Iwasaki and Ken Takeuchi, “Investigation of Verify-Programming Methods to Achieve 10 Million Cycles for 50nm HfO2 ReRAM,” IEEE International Memory Workshop, May 2012.

Yuki Yanagihara, Kousuke Miyaji and Ken Takeuchi, “Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory,” IEEE International Memory Workshop, May 2012.

Ken Takeuchi, “NAND & Controller Co-design for SSD,” IEEE International Memory Workshop Short Course, May 2012.【招待講演】

Ken Takeuchi, “Highly reliable low power Solid-State Drives (SSDs),” The 2012 International Meeting for Future of Electron Devices, Kansai (IMFEDK), May 2012.【招待講演】

Shuhei Tanakamaru, Chinglin Hung and Ken Takeuchi, “Asymmetric Coding and Stripe Pattern Elimination Algorithm for Highly Relialbe Low Power SSDs,” Workshop on Coding for Flash Memories, March 2012.

Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano and Ken Takeuchi, “A 6T-SRAM with a Carrier Injection Scheme to Pinpoint and Repair Fails that Achieves 57% Faster Read and 31% Lower Read Energy,” IEEE International Solid-State Circuits Conference (ISSCC), pp. 232-233, February 2012.

Shuhei Tanakamaru, Yuki Yanagihara and Ken Takeuchi, “Over 10-times Extended Lifetime, 76% Reduced Error Solid-State Drives (SSDs) with Error Prediction LDPC Architecture and Error Recovery Scheme,” IEEE International Solid-State Circuits Conference (ISSCC), pp. 424-425, February 2012.

Teruyoshi Hatanaka, Koh Johguchi and Ken Takeuchi, “A 3D-Integration Method to Compensate Output Voltage Degradation of Boost Converter for Compact Solid-State-Drives,” IEEE International Conference on 3D System Integration (3D IC), January 2012.

Koh Johguchi, Toshimichi Shintani, Takahiro Morikawa, Kazuaki Yoshioka and Ken Takeuchi, “Temperature Controlling Set Method for Multi-Level Cell Phase Change Memories: x10 Fast Write, 80% Energy Saving,” IEEE Non-Volatile Memory Technology Symposium (NVMTS), November 2011.

Ken Takeuchi, “Highly reliable Low Power Storage Class Memory & NAND Flash Memory Hybrid Solid-State Drive (SSD),” IEEE Non-Volatile Memory Technology Symposium (NVMTS), November 2011. 【招待講演】

T. Yokota, T. Sekitani, T. Nakagawa, Y. Noguchi, K. Takeuchi, U. Zschieschang, H. Klauk and T. Someya, “Control of switching voltage of low voltage organic complementary inverter using floating gate structure,” International Conference on Solid State Devices and Materials (SSDM), September 2011.

Xizhen Zhang, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai, “First 64kb Ferroelectric-NAND Flash Memory Array with 7.5 V Program, 108 Endurance and Long Data Retention,” International Conference on Solid State Devices and Materials (SSDM), pp. 975-976, September 2011.

Koh Johguchi, Teruyoshi Hatanaka and Ken Takeuchi, “Adaptive Through-Silicon-Via Control with Clustering for 3D Solid-State-Drive Boost Converter System,” International Conference on Solid State Devices and Materials (SSDM), pp. 1057-1058, September 2011.

Kousuke Miyaji, Chinglin Hung and Ken Takeuchi, “Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells,” International Conference on Solid State Devices and Materials (SSDM), pp. 128-129, September 2011.

Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi, “50nm HfO2 ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse & Verify Scheme,” International Conference on Solid State Devices and Materials (SSDM), pp. 1101-1102, September 2011.

Yasuhiro Shinozuka, Kousuke Miyaji and Ken Takeuchi, “A Zero Additional Process to Standard CMOS, 8F2, Scalable Embedded Flash Memory with Drain-side Assisted Erase Scheme,” International Conference on Solid State Devices and Materials (SSDM), pp. 981-982, September 2011.