Shun Okamoto, Chao Sun, Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi, “3D-Integrated Storage Class Memory/NAND Flash Hybrid SSDs for Cloud Data Centers,” 5th Non-Volatile Memories Workshop 2014 (NVMW) Poster, March 2014.
Shuhei Tanakamaru, Masafumi Doi and Ken Takeuchi, “Highly Reliable Techniques for NAND Flash Memory / ReRAM Hybrid Storage,” 5th Non-Volatile Memories Workshop 2014 (NVMW), March 2014.
Chao Sun, Ayumi Soga, Takahiro Onagi, Koh Johguchi and Ken Takeuchi, “A Workload-Aware-Design of 3D-NAND Flash Memory for Enterprise SSDs,” The International Symposium on Quality Electronic Design (ISQED), pp.554-561, March 2014.
Shuhei Tanakamaru, Hiroki Yamazawa, Tsukasa Tokutomi, Sheyang Ning and Ken Takeuchi, “Hybrid Storage of ReRAM/TLC NAND Flash with RAID-5/6 for Cloud Data Centers,” IEEE International Solid-State Circuits Conference (ISSCC), pp.335-338, February 2014.
Koh Johguchi, Toru Egami and Ken Takeuchi, “Low-Power Super-Lattice Phase-Change Memory without Melting and Write-Pulse Down Slope” Phase Change Oriented Science (PCOS), pp. 73-74, November 2013.
Koh Johguchi, Toru Egami, Koueuke Miyaji and Ken Takeuchi, “Write Voltage and Read Reference Current Generator for MLC-PCM Considering with Temperature Characteristics” Phase Change Oriented Science (PCOS), pp. 71-72, November 2013.
Ken Takeuchi, “Storage Class Memory & NAND Flash Memory Hybrid Solid-State Drives (SSD)” 224th Electrochemical Society Meeting (ECS) Transactions, vol. 58, no. 5, pp 3-8, October 2013. 【招待講演】
Kousuke Miyaji, Chao Sun and Ken Takeuchi, “Co-Design of Application Software and NAND Flash Memory for Database Storage System,” International Conference on Solid State Devices and Materials (SSDM), pp.130-131, September 2013.
Sheyang Ning, Tomoko Ogura Iwasaki and Ken Takeuchi, “Mb-Class Array Level Investigation of Program Verify Methods for AlxOy ReRAM,” International Conference on Solid State Devices and Materials (SSDM), pp.572-573, September 2013.
Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi, “TLC/MLC NAND Flash Mix-and-Match Design with Exchangeable Storage Array,” International Conference on Solid State Devices and Materials (SSDM), pp. 894-895, September 2013.
Toru Egami, Koh Johguchi, Senju Yamazaki and Ken Takeuchi, “Investigation of Multi-Level-Cell Operation with 2-Step SET Pulse and SET Operation on Super-Lattice Phase Change Memories,” International Conference on Solid State Devices and Materials (SSDM), pp. 548-549, September 2013.
Ken Takeuchi, “Scaling Challenges of NAND Flash Memory and Hybrid Memory System with Storage Class Memory & NAND flash memory,” IEEE Custom Integrated Circuits Conference (CICC), pp. 1-6, September 2013.【招待講演】
Tomoko Iwasaki, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun and Ken Takeuchi, “Hybrid ReRAM and MLC NAND SSD Memory System with Data Fragmentation Suppression,” Flash Memory Summit, August 2013.
Shuhei Tanakamaru, Masafumi Doi and Ken Takeuchi, “Unified Solid-State-Storage with NAND Flash Memory / ReRAM Hybrid Architecture,” Flash Memory Summit, August 2013.
Shuhei Tanakamaru, Yuki Yanagihara and Ken Takeuchi, “SSDs with Error-Prediction LDPC (EP-LDPC) and Error-Recovery Schemes,” Flash Memory Summit, August 2013.
Ken Takeuchi, “3D Hybrid SSD with Storage Class Memory and NAND Flash Memory for Big-Data Application,” IEEE Symp. on VLSI Circuits, Joint Rump Session, June 2013.【招待講演】
Ken Takeuchi, “Storage Class Memory and NAND Flash Memory Hybrid Solid-State Storage System for Big-Data Application,” IEEE Symp. on VLSI Circuits, Short Course, June 2013.【招待講演】
Masafumi Doi, Shuhei Tanakamaru and Ken Takeuchi, “An Optimum Asymmetric Coding Strategy to Improve Program-Disturb Error in 2X, 3X and 4Xnm NAND Flash Memories for Highly Reliable Enterprise Solid-State Drives (SSDs),” Silicon Nanoelectronics Workshop (SNW), pp.7-8, June 2013.
Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi, “Write Voltage and Read Reference Current Generator for Multi-Level Ge2Sb2Te5-based Phase Change Memories with Temperature Characteristics Tracking,” IEEE International Memory Workshop, pp. 104-107, May 2013.
Sheyang Ning, Tomoko Ogura Iwasaki and Ken Takeuchi, “Write Stress Reduction in 50nm AlxOy ReRAM Improves Endurance 1.4× and Write Time, Energy by 17%,” IEEE International Memory Workshop, pp. 56-59, May 2013.