Ken Takeuchi, “Can memory provide performance breakthrough for traditional architectures?”, IEEE International Solid-State Circuits Conference (ISSCC) Panel What Technologies Will Shape the Future of Computing?, February 19, 2021. 【招待講演】

Chihiro Matsui and Ken Takeuchi, “SLC Flash & ReRAM Heterogeneous Memory System with Multi-Tier 5G Network & Device Co-Design for Smart Manufacturing”, International Conference on Solid State Devices and Materials (SSDM), September 30, 2020.

Ken Takeuchi, “Heterogeneously Integrated Adaptive Storage System for 5G Network”, International Conference on Solid State Devices and Materials (SSDM) Short Course, September 27, 2020.【招待講演】

Chihiro Matsui, Shun Suzuki and Ken Takeuchi, “Spatial Color-Perceived Data Control of NAND Flash for Image Detection,” IEEE Silicon Nanoelectronics Workshop (SNW), June 13-14, 2020.

Shun Suzuki, Hiroki Aihara, Keita Mizushina, Shin Yamaguchi and Ken Takeuchi, “Approximate 3D-TLC NAND Flash Write with Initial Error Injection for Application-level Reliability Improvement of Machine Learning-based Computing,” IEEE Silicon Nanoelectronics Workshop (SNW), June 13-14, 2020.

Keita Mizushina, Shun Suzuki, Hiroki Aihara and Ken Takeuchi, “3840x Reliability Enhanced Robust NAND flash Optimized to Store Weight Data for Object Detection and Semantic Segmentation of Self-driving Car at High Temperature,” IEEE Silicon Nanoelectronics Workshop (SNW), June 13-14, 2020.

Hiroki Aihara, Kyosuke Maeda, Shun Suzuki and Ken Takeuchi, “Extremely Biased Error Correction Method to Reduce Read Disturb Errors of 3D-TLC NAND Flash Memories by 60%,” IEEE International Memory Workshop Poster, May 18, 2020.

Yusaku Hine, Reika Kinoshita, Yoshiki Kakuta and Ken Takeuchi, “Data Allocation Algorithm based on Write and Read Frequency for Double Asymmetric-latency SCM SSD,” IEEE International Memory Workshop Poster, May 20, 2020.

Masaki Abe, Chihiro Matsui, Keita Mizushina, Shun Suzuki and Ken Takeuchi, “Computational Approximate Storage with Neural Network-based Error Patrol of 3D-TLC NAND Flash Memory for Machine Learning Applications,” IEEE International Memory Workshop Poster, May 20, 2020.

Chihiro Matsui and Ken Takeuchi, “ReRAM Cell Reliability Variation Tolerated High-Speed Approximate Storage for Machine Learning,” IEEE Symp. on Low-Power and High-Speed Chips and Systems (Cool Chips 23) Poster, April 15, 2020.

Yoshiki Kakuta, Reika Kinoshita, Hiroshi Kinoshita, Chihiro Matsui and Ken Takeuchi, “Real-time Error Monitoring System Considering Endurance and Data-retention Characteristics of TaOX-based ReRAM Storage with Workloads at Data Centers,” IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT), August 13, 2020.

Tsubasa Yonai, Hiroshi Kinoshita, Ryutaro Yasuhara and Ken Takeuchi, “98% Endurance Error Reduction by Hard_Verify for 40nm TaOX-based ReRAM,” IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), August 11, 2020.

Reika Kinoshita, Atsuya Suzuki, Shouhei Fukuyama, Chihiro Matsui and Ken Takeuchi, “Workload-aware Data-eviction Self-adjusting System of Multi-SCM Storage to Resolve Trade-off between SCM Data-retention Error and Storage System Performance,” 25th Asia and South Pacific Design Automation Conference (ASP-DAC 2020), pp. 319-324, January 2020.

Shun Suzuki, Kyoji Mizoguchi, Hikaru Watanabe, Toshiki Nakamura, Yoshiaki Deguchi, Keita Mizushina and Ken Takeuchi, “Privacy-Aware Data-Lifetime Control NAND Flash System for Right to be Forgotten with In-3D Vertical Cell Processing,” IEEE Asian Solid-State Circuits Conference (A-SSCC), November 6, 2019.

Koki Kamimura, Susumu Nohmi, Kenta Suzuki and Ken Takeuchi, “Parallel Product-Sum Operation Neuromorphic Systems with 4-bit Ferroelectric FET Synapses,” IEEE European Solid-State Device Research Conference (ESSDERC), pp. 178-181, September 2019.

Hiroshi Kinoshita, Shouhei Fukuyama, Tsubasa Yonai, Ryutaro Yasuhara and Ken Takeuchi, “85% Endurance Error Reduction by Changing Reset Voltage in 40nm TaOX-based ReRAM,” International Conference on Solid State Devices and Materials (SSDM), September, 2019.

Reika Kinoshita, Chihiro Matsui and Ken Takeuchi, “Maximizing Performance/cost of SSD Composed of Memory-type and Storage-type SCMs,” Flash Memory Summit, August, 2019.

Chihiro Matsui and Ken Takeuchi, “TaOx-based ReRAM for Variability-Aware Approximate Computing,” Flash Memory Summit, August, 2019.

Ken Takeuchi, “Non-volatile Memory Storage for Machine Learning,” IEEE SSCS VLSIedu, June 13, 2019.

Masaki Abe, Toshiki Nakamura and Ken Takeuchi, “Pre-shipment Data-retention/Read-disturb Lifetime Prediction & Aftermarket Cell Error Detection & Correction by Neural Network for 3D-TLC NAND Flash Memory,” IEEE Symp. on VLSI Technology, pp. 216-217, June 13, 2019.