Masafumi Doi, Shuhei Tanakamaru and Ken Takeuchi, “An Optimum Asymmetric Coding Strategy to Improve Program-Disturb Error in 2X, 3X and 4Xnm NAND Flash Memories for Highly Reliable Enterprise Solid-State Drives (SSDs),” Silicon Nanoelectronics Workshop (SNW), pp.7-8, June 2013.
Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi, “Write Voltage and Read Reference Current Generator for Multi-Level Ge2Sb2Te5-based Phase Change Memories with Temperature Characteristics Tracking,” IEEE International Memory Workshop, pp. 104-107, May 2013.
Sheyang Ning, Tomoko Ogura Iwasaki and Ken Takeuchi, “Write Stress Reduction in 50nm AlxOy ReRAM Improves Endurance 1.4× and Write Time, Energy by 17%,” IEEE International Memory Workshop, pp. 56-59, May 2013.
Tomoko Ogura Iwasaki, Sheyang Ning and Ken Takeuchi, “Stability Conditioning to Enhance Read Stability 10x in 50nm AlxOy ReRAM,” IEEE International Memory Workshop, pp. 44-47, May 2013.
Chao Sun, Kousuke Miyaji, Koh Johguchi, and Ken Takeuchi, “SCM Capacity and NAND Over-Provisioning Requirements for SCM/NAND Flash Hybrid Enterprise SSD,” IEEE International Memory Workshop, pp.64-67, May 2013.
Koh Johguchi, Toru Egami and Ken Takeuchi, “Highly Reliable, Low-Power Super-Lattice Phase-Change Memory without Melting and Write-Pulse Down Slope,” IEEE International Reliability Physics Symposium (IRPS), MY.5.1-MY.5.4, April 2013.
Kousuke Miyaji, Daisuke Kobayashi, Shinji Miyano and Ken Takeuchiand, “Analysis on Static Noise Margin Improvement in 40nm 6T-SRAM with Post-Process Local Electron Injected Asymmetric Pass Gate Transistor,” IEEE International Reliability Physics Symposium (IRPS), 3B.6.1-3B.6.5, April 2013.
Shuhei Tanakamaru, Masafumi Doi and Ken Takeuchi, “Error-Prediction Analyses in 1X, 2X and 3Xnm NAND Flash Memories for System-Level Reliability Improvement of Solid-State Drives (SSDs),” IEEE International Reliability Physics Symposium (IRPS), 3B.3.1-3B.3.6, April 2013.
Ken Takeuchi, “Solid-State Drives (SSDs) with Flash Memories and Storage Class Memories,” IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT) and IEEE International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), April 2013.【招待講演】
Teruyoshi Hatanaka, Koh Johguchi and Ken Takeuchi, “Investigation of Program-Voltage Generator Integration for ReRAM and NAND Flash Memory Hybrid Three-Dimensional Solid-State Drive,” International Conference on Electronics Packaging, pp. 473-477, April 2013.
Shuhei Tanakamaru, Masafumi Doi and Ken Takeuchi, “Unified Solid-State Storage Architecture with NAND Flash Memory and ReRAM that Tolerates 32X Higher BER for Big-Data Applications,” IEEE International Solid-State Circuits Conference (ISSCC), pp.226-227, February 2013.
Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi, “Over 10-times High-speed, Energy Efficient 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSD by Intelligent Data Fragmentation Suppression,” 18th Asia and South Pacific Design Automation Conference (ASP-DAC 2013) University LSI Design Contest, January 2013.
Shuhei Tanakamaru, Yuki Yanagihara and Ken Takeuchi, “Highly Reliable Solid-State Drives (SSDs) with Error-Prediction LDPC (EP-LDPC) Architecture and Error-Recovery Scheme,” 18th Asia and South Pacific Design Automation Conference (ASP-DAC 2013) University LSI Design Contest, January 2013.
Ken Takeuchi, “Highly Reliable Signal Processing Technologies for Dependable Solid-State Drives (SSDs),” The 18th IEEE Pacific Rim International Symposium on Dependable Computing (PRDC), pp. 21, November 2012.【招待講演】
Koh Johguchi, Kazuaki Yoshioka and Ken Takeuchi, “High Density NAND Phase Change Memory with Block-Erase Architecture and Investigations for Write and Disturb Requirements,” Phase Change Oriented Science (PCOS), pp. 36, November 2012.
Ken Takeuchi, “Hybrid Memory Architecture of PCM and NAND flash memories for Enterprise Storage ,” Phase Change Oriented Science (PCOS), pp. 21, November 2012.【招待講演】
Ken Takeuchi, “Signal Processing and Data Management Technologies for NAND&ReRAM Hybrid SSD ,” New Non-Volatile Memory Workshop 2012, pp. A2-1 – A2-37 November 2012.【招待講演】
Ken Takeuchi, “Variability and Failure Recovery of SRAM and Flash Memory,” IEEE/ACM Workshop on Variability Modeling and Characterization (VMC), November 2012.【招待講演】
Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi and Ken Takeuchi, “An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 313-316, November 2012.
Teruyoshi Hatanaka and Ken Takeuchi, “VSET/RESET and VPGM Generator without Boosting Dead Time for 3D-ReRAM and NAND flash Hybrid Solid-State Drives,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 309-312, November 2012.
