論文発表

Ken Takeuchi, “NAND Flash and Storage Class Memory-integrated Hybrid Solid-State Drive (SSD),” Silicon Nanoelectronics Workshop (SNW) , Rump Session: Non-Volatile Memories for Storage Device and New Applications, June 2011. 【招待講演】

Kousuke Miyaji, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “Initialize & Weak-Program Erasing Scheme for Elimination of Cell VTH Shift Variation Due to History Effect in Ferroelectric (Fe)-NAND Flash Memories,” Silicon Nanoelectronics Workshop (SNW), pp.81-82, June 2011.

Xizhen Zhang, Kousuke Miyaji, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai, “0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory,” IEEE International Memory Workshop, pp.155-158, May 2011.

Ken Takeuchi, “Storage Class Memory and Memory System Innovation – International Collaboration for Material, Device, Circuit, Signal Processing and OS Integration,” The Seventh International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011.【招待講演】

Ken Takeuchi, “Future SSD Technology,” Star Visitor Seminar, Data Storage Institute, Singapore, March 2011.【招待講演】

Ken Takeuchi, “Future Nonvolatile Memory Technology,” Star Visitor Seminar, Data Storage Institute, Singapore, March 2011.【招待講演】

Shuhei Tanakamaru, Chinglin Hung, Atsushi Esumi, Mitsuyoshi Ito, Kai Li and Ken Takeuchi, “95% Lower Bit Error Rate, 35% Lower Power Intelligent Solid-State Drives (SSDs) with Asymmetric Coding and Stripe Pattern Elimination Algorithm,” IEEE International Solid-State Circuits Conference (ISSCC), pp. 204-205, February 2011.

Ken Takeuchi, “Storage Class Memory,” 8th International Workshop on Future Information Processing Technologies ( IWFIPT ), October 2010.【招待講演】

Mayumi Fukuda, Kazuhide Higuchi, Shuhei Tanakamaru and Ken Takeuchi, “3.6-Times Higher Acceptable Raw Bit Error Rate, 97% Lower-Power, NV-RAM & NAND-Integrated Solid-State Drives (SSDs) with Adaptive Codeword ECC,” International Conference on Solid State Devices and Materials (SSDM), pp.1166-1167, September 2010.

Ken Takeuchi, “Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology,” International Conference on Solid State Devices and Materials (SSDM), pp.1086-1087, September 2010. 【招待講演】

Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano and Ken Takeuchi, “Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor,” IEEE Custom Integrated Circuits Conference (CICC), September 2010.

Teruyoshi Hatanaka, Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi, “A 60% Higher Write Speed, 4.2Gbps, 24-Channel 3D-Solid State Drive (SSD) with NAND Flash Channel Number Detector and Intelligent Program-Voltage Booster,” IEEE Symp. on VLSI Circuits, pp.233-234, June 2010.

Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Shinji Miyano and Ken Takeuchi, “70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection,” IEEE Symp. on VLSI Circuits, pp.41-42, June 2010.

Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD,” IEEE International Memory Workshop, pp.42-45, May 2010.

Shuhei Tanakamaru, Atsushi Esumi, Mitsuyoshi Ito, Kai Li and Ken Takeuchi, “Post-manufacturing, 17-times Acceptable Raw Bit Error Rate Enhancement, Dynamic Codeword Transition ECC Scheme for Highly Reliable Solid-State Drives, SSDs,” IEEE International Memory Workshop, pp88-91, May 2010.

Ken Takeuchi, “Low Power 3D-integrated Solid-State Drive (SSD) with Adaptive Voltage Generator,” IEEE International Memory Workshop, pp.13-16, May 2010.【招待講演】

Kosuke Miyaji and Ken Takeuchi, “Advanced NAND Flash Memory Devices and Solid-State Drives,” Materials Research Society (MRS) Spring Meeting, Tutorial Session G, April 2010. 【招待講演】

Ken Takeuchi, “Ferroelectric-gate FET for Flash Memory & SRAM application,” ITRS Emerging Research Devices and Emerging Research Materials Meeting, Memory Workshop, April 2010.【招待講演

Kosuke Miyaji, Teruyoshi Hatanaka, Shuhei Tanakamaru, Ryoji Yajima, Shinji Noda, Mitsue Takahashi and Shigeki Sakai and Ken Takeuchi, “A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC,” Materials Research Society (MRS) Spring Meeting, April 2010. 【招待講演】

Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin,” IEEE International Electron Devices Meeting (IEDM), pp. 11.7.1-11.7.4, December 2009.