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Posted 2020年3月31日 by master

“0.5Vで動作するSRAM，東京大学らが強誘電体FETで実現”, 日経エレクトロニクス, 2009年12月8日.

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Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo Department of Information and Communication Engineering, Faculty of Engineering, The University of Tokyo Systems Design Lab., Graduate School of Engineering, The University of Tokyo

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