JournalPapers_021

Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A 0.5-V 6-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors,” Japanese Journal of Applied Physics (JJAP), vol. 49, no. 12, pp. 121501-121509, December 2010.

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