JournalPapers_083

Yoshiaki Deguchi, Atsuro Kobayashi and Ken Takeuchi, “Write/Erase Stress Relaxation Effect on Data-Retention and Read-Disturb Errors in TLC NAND Flash Memory with Round-Robin Wear-Leveling,” Japanese Journal of Applied Physics (JJAP), vol. 56, no. 4S, 04CE01, April 2017.

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