JournalPapers_043

Kousuke Miyaji, Toshikazu Suzuki and Ken Takeuchi, “A 6T-SRAM with a Post-Process Electron Injection Scheme that Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy,” IEEE J. of Solid-State Circuits, vol. 48, no. 9, pp. 2239-2249, September, 2013.

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