JournalPapers_037

Xizhen Zhang, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai, “64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention,” Japanese Journal of Applied Physics (JJAP), vol. 51, no. 4, pp. 04DD01, April 2012.

filed under: