JournalPapers_034

Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi, “Endurance Enhancement and High Speed Set/Reset of 50nm Generation HfO2–based Resistive Random Access Memory (ReRAM) Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme,” Japanese Journal of Applied Physics (JJAP), vol. 51, no. 2, pp. 02BD07, February 2012.

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