InternationalConference_215

Shun Suzuki, Yoshiaki Deguchi, Toshiki Nakamura and Ken Takeuchi, “Endurance-based Dynamic VTH Distribution Shaping of 3D-TLC NAND Flash Memories to Suppress Both Lateral Charge Migration and Vertical Charge De-trap and Increase Data-retention Time by 2.7x,” IEEE European Solid-State Device Research Conference (ESSDERC), pp.150-153, September 2018.

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