InternationalConference_187

Atsuna Hayakawa, Kazuki Maeda, Shouhei Fukuyama, Hirofumi Takishita, Ryutaro Yasuhara, Satoshi Mishima and Ken Takeuchi, “Resolving Endurance and Program Time Trade-off of 40nm TaOx-based ReRAM by Co-optimizing Verify Cycles, Reset Voltage and ECC Strength,” IEEE International Memory Workshop Poster, May 15, 2017.

filed under: