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Kazuki Maeda, Shouhei Fukuyama, Ryutaro Yasuhara, Satoshi Mishima and Ken Takeuchi, “Error Recovery of Low Resistance State in 40nm TaOx-based ReRAM,” IEEE International Reliability Physics Symposium (IRPS), pp.5A-4.1-5A-4.6, April 6, 2017.

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