InternationalConference_173

Yoshiaki Deguchi, Atsuro Kobayashi and Ken Takeuchi, “47% Data-Retention Error Reduction of TLC NAND Flash Memory by Introducing Stress Relaxation Period with Round-Robin Wear-leveling,” International Conference on Solid State Devices and Materials (SSDM), pp.107-108, September 29, 2016.

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