InternationalConference_161

Yoshiaki Deguchi, Tsukasa Tokutomi and Ken Takeuchi, “System-Level Error Correction by Read-Disturb Error Model of 1Xnm TLC NAND Flash Memory for Read-Intensive Enterprise Solid-State Drives (SSDs),” IEEE International Reliability Physics Symposium (IRPS) Poster, pp.MY-6-1-MY-6-4, April 2016.

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