InternationalConference_058 Posted 2020年3月30日 by master Xizhen Zhang, Kousuke Miyaji, Mitsue Takahashi, Ken Takeuchi, and Shigeki Sakai, “0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory,” IEEE International Memory Workshop, pp.155-158, May 2011.
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