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Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, “A Zero VTH Memory Cell Ferroelectric-NAND Flash Memory with 32% Read Disturb, 24% Program Disturb, 10% Data Retention Improvement for Enterprise SSD,” IEEE European Solid-State Device Research Conference (ESSDERC), pp.225-228, September 2009.

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