InternationalConference_006 Posted 2020年3月30日 by master Tomoharu Tanaka, Toru Tanzawa, and Ken Takeuchi, “A 3.4-Mbyte/sec Programming 3-Level NAND Flash Memory Savein 40% Die Size per Bit,” IEEE Symp. on VLSI Circuits, pp. 65-66, June 1997.
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